KOKUSAI-ELECTRIC (KE)

DD 802V H

QUIXACE II DOPED POLY

DJ 853V 8BL

DJ-1223VN	

QUIXACE II POLY

QUIXACE II

DJ-1206VN-DF

DJ 1236VN DF

DD-812V

QUIXACE II NITRIDE

"VERTRON-III(F3) Model Numbers:DD-823V/DJ-823V. Hitachi Kokusai Electric's Vertron-III series Vertical Diffusion/LPCVD systems have been developed especially for 200mm wafers which are predominantly used in high-volume-semiconductor device manufacturing. The Vertron-III platform offers solid reliability and provides superior cost of ownership (Co0)to our customers.
 
The Vertron-III offers all conventional films as well as the unique processes of BTBAS Si3N4, and Selective SiGe epitaxy. Hitachi Kokusai is recognized as a leader in thermal solutions and customer satisfaction."

DD-823V

VR-70

QUIXACE is KOKUSAI ELECTRIC's latest platform for batch thermal processing of 300mm wafers. The QUIXACE offers high throughput by utilizing advanced technologies in such areas as temperature control, wafer handling automation, reactor purging, and temperature ramping.

QUIXACE

"VERTRON-III(G) Model Numbers:DD-833V/DJ-833V. Hitachi Kokusai Electric's Vertron-III series Vertical Diffusion/LPCVD systems have been developed especially for 200mm wafers which are predominantly used in high-volume-semiconductor device manufacturing. The Vertron-III platform offers solid reliability and provides superior cost of ownership (Co0)to our customers.
 
The Vertron-III offers all conventional films as well as the unique processes of BTBAS Si3N4, and Selective SiGe epitaxy. Hitachi Kokusai is recognized as a leader in thermal solutions and customer satisfaction."

DJ 833V

"VERTRON-III(J3). Model Numbers: DD-853V/DJ-853V. Hitachi Kokusai Electric's Vertron-III series Vertical Diffusion/LPCVD systems have been developed especially for 200mm wafers which are predominantly used in high-volume-semiconductor device manufacturing. The Vertron-III platform offers solid reliability and provides superior cost of ownership (Co0)to our customers.
 
The Vertron-III offers all conventional films as well as the unique processes of BTBAS Si3N4, and Selective SiGe epitaxy. Hitachi Kokusai is recognized as a leader in thermal solutions and customer satisfaction."

DJ 853V

DJ 1206V-DF

QUIXACE ULTIMATE

DD 803V

DD-802V for diffusion.
The vertical reactor can accommodate 120 150mm wafers and up to 165 in the future.

DD-802V

DJ 1223V

QUIXACE II ALD NITRIDE 

DJ-1206VN-DM

"VERTRON-III(F3). Model Numbers: DD-823V/DJ-823V. Hitachi Kokusai Electric's Vertron-III series Vertical Diffusion/LPCVD systems have been developed especially for 200mm wafers which are predominantly used in high-volume-semiconductor device manufacturing. The Vertron-III platform offers solid reliability and provides superior cost of ownership (Co0)to our customers.
 
The Vertron-III offers all conventional films as well as the unique processes of BTBAS Si3N4, and Selective SiGe epitaxy. Hitachi Kokusai is recognized as a leader in thermal solutions and customer satisfaction."

DJ 823V

DJ 1207S-DD

QUIXACE II ANNEAL

DJ-802V for LPCVD.
For LPCVD films, from 50 to 100 wafers are processed, depending on the film. 

DJ-802V

DJ-1223 VN-DF

DJ-835V

CX 3000

DD1223V

QUIXACE ULTIMATE ALD SIN

QUIXACE ULTIMATE ALD SIO2

CX 3202

DD803

ZESTONE-III: DD-1223V

DD 1223VN

QUIXACE II CURE

DD 853V

DJ-1206VN	

CX1204

DJ 802

***PARTS***

ADVANCED ACE-300

QUIXACE ULTIMATE ALD TIN

DD-1206VN-DF

DJ-802V-H

CX 2000

DD 823V-8BL

Vertical furnace, HTO (High Temperature Oxide)

DD 853V-8BL

DJ-813	

DD 1205V

QUIXACE NITRIDE

"VERTRON-III(G) Model Numbers: DD-833V/DJ-833V. Hitachi Kokusai Electric's Vertron-III series Vertical Diffusion/LPCVD systems have been developed especially for 200mm wafers which are predominantly used in high-volume-semiconductor device manufacturing. The Vertron-III platform offers solid reliability and provides superior cost of ownership (Co0)to our customers.
 
The Vertron-III offers all conventional films as well as the unique processes of BTBAS Si3N4, and Selective SiGe epitaxy. Hitachi Kokusai is recognized as a leader in thermal solutions and customer satisfaction."

DD 833V

DJ 815V-8L

VERTRON DD-803V

DJ-813V

QUIXACE DJ-1206-VN

ZESTONE- IIIC

QUIXACE ALDINNA

"VERTRON-V(S2). Model Numbers: DD-835V/DJ-853V. As semiconductor devices becomes more highly integrated and miniaturized, it is necessary to control native oxide film growth on the wafer surface at the time of loading for applications such as formation of contact Poly-Si, capacitor nitride, ultra thin oxidation and selective oxidation, etc.
Hitachi Kokusai Electric recommends Load Lock vertical Diffusion/LPCVD Systems, Vertron-V, for these processes to utilize the unique oxygen free load lock chamber mounted directly underneath reactor tube."

DJ-853

DD1223VNP

VERTRON 5S

DJ-1810N-DLS

QUIXACE DF

DJ803

DD-802

DD 802V-B

QUIXACE-LV

CX 5000

DD 1236VN DF

DD 853V-8BL2

DJ1206VN

DJ 835-V-8L

DD-1223 V-DF 

DD 823V-8PL

DD-1206V-DF

DD-1810N-DLS

ZESTONE NITR

VERTEX II

ZESTONE-V(B) DJ-1205V-DF

DJ 1207S

500TC

VERTRON III

QUIXACE II ALD HIGH-K

DJ-807S-8C

DJ 803V

DJ 1206-VN HKE

QUIXACE II TEOS

CX 9620

DD 1206VN-DM QUIXACE MINI

"VERTEX-(S2).Model Numbers: DD-835V/DJ-835VAs semiconductor devices becomes more highly integrated and miniaturized, it is necessary to control native oxide film growth on the wafer surface at the time of loading for applications such as formation of contact Poly-Si, capacitor nitride, ultra thin oxidation and selective oxidation, etc.
Hitachi Kokusai Electric recommends Load Lock vertical Diffusion/LPCVD Systems, Vertron-V, for these processes to utilize the unique oxygen free load lock chamber mounted directly underneath reactor tube."

KOKUSAI-ELECTRIC (KE)

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