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PLASMA-THERM 790
    Description
    Multi-Process Etch
    Configuration
    No Configuration
    OEM Model Description
    The Plasma-Therm 790 series is a self-contained Reactive Ion Etching (RIE) system that features a showerhead gas distribution system and a water-cooled RF platen. This system is capable of etching silicon, silicon dioxide, and silicon nitride. The chamber can achieve a base pressure in the range of 3x10-5 Torr and can operate within a pressure range of 10mTorr to 100mTorr. The system is controlled by a PC and offers both manual and automatic operation modes. It has four process gases available: CF4, CHF3, SF6, and O2.
    Documents

    No documents

    PLASMA-THERM

    790

    verified-listing-icon

    Verified

    CATEGORY

    Plasma Etch
    Last Verified: 25 days ago
    Key Item Details

    Condition:

    Used


    Operational Status:

    Unknown


    Product ID:

    12709


    Wafer Sizes:

    8"/200mm


    Vintage:

    Unknown

    Have Additional Questions?
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    Available
    Money Back Guarantee
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    Transaction Insured by Moov
    Available
    Refurbishment Services
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    PLASMA-THERM 790
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    PLASMA-THERM

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    verified-listing-icon

    Verified

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    listing-photo-3feabbbb771ba7fa2401fe48e8ebab325e0725a007e76278dafbff4a9c158c61-https://media-moov-co.s3.us-west-1.amazonaws.com/user_media/listingPhoto/XZEyGkZyJ-9yXLpkbQ-beQw-yasZQLH-Iuh31A5-AYA/3feabbbb771ba7fa2401fe48e8ebab325e0725a007e76278dafbff4a9c158c61/f2c771707c0b8190bf6a048bec03238a393ccca7b990d77f9a3e90f6ca78a55c_20200420_094044_f
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    Key Item Details

    Condition:

    Used


    Operational Status:

    Unknown


    Product ID:

    12709


    Wafer Sizes:

    8"/200mm


    Vintage:

    Unknown


    Logistics Support
    Available
    Money Back Guarantee
    Available
    Transaction Insured by Moov
    Available
    Refurbishment Services
    Available
    Description
    Multi-Process Etch
    Configuration
    No Configuration
    OEM Model Description
    The Plasma-Therm 790 series is a self-contained Reactive Ion Etching (RIE) system that features a showerhead gas distribution system and a water-cooled RF platen. This system is capable of etching silicon, silicon dioxide, and silicon nitride. The chamber can achieve a base pressure in the range of 3x10-5 Torr and can operate within a pressure range of 10mTorr to 100mTorr. The system is controlled by a PC and offers both manual and automatic operation modes. It has four process gases available: CF4, CHF3, SF6, and O2.
    Documents

    No documents

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